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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Designer'sTM Data Sheet
SWITCHMODETM NPN Bipolar Power Transistor for Electronic Light Ballast and Switching Power Supply Applications
The MJE/MJF18206 have an application specific state-of-the-art die dedicated to the electronic ballast ("light ballast") and power supply applications. * Improved Global Efficiency Due to Low Base Drive Requirements: -- High and Flat DC Current Gain hFE -- Fast Switching -- No Coil Required in Base Circuit for fast Turn-Off (No Current Tail) * Full Characterization at 125_C * Motorola "6 SIGMA" Philosophy Provides Tight and Reproducible Parametric Distributions * Two Package Choices: Standard TO-220 or Isolated TO-220 MAXIMUM RATINGS
MJE18206 MJF18206
POWER TRANSISTORS 8 AMPERES 1200 VOLTS 40 and 100 WATTS
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Rating Symbol VCEO VCBO VCES MJE18206 MJF18206 Unit Vdc Vdc Vdc Vdc Adc Adc Collector-Emitter Voltage Collector-Base Voltage 600 1200 1200 10 Collector-Emitter Voltage Emitter-Base Voltage VEBO IC ICM IB IBM Collector Current -- Continuous -- Peak (1) Base Current -- Continuous -- Peak (1) RMS Isolation Voltage (2) (for 1 sec, R.H. 30%) TC = 25C 8 16 5 9 Per Figure 22 Per Figure 23 Per Figure 24 VISOL1 VISOL2 VISOL3 PD 4500 3500 1500 40 0.32 Volts *Total Device Dissipation @ TC = 25C *Derate above 25_C Operating and Storage Temperature 100 0.8 Watt W/_C TJ, Tstg - 65 to 150
CASE 221A-06 TO-220AB
_C
THERMAL CHARACTERISTICS
Rating
Symbol RJC RJA TL
MJE18206 1.25 62.5
MJF18206 3.125 62.5
Unit
Thermal Resistance -- Junction to Case -- Junction to Ambient Maximum Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds
_C/W _C
260
CASE 221D-02 TO-220 FULLPACK
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. (2) Proper strike and creepage distance must be provided.
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Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design.
Designer's and SWITCHMODE are trademarks of Motorola, Inc.
(c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data
1
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II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIII I I I I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I I IIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII II I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I II I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I I I II I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I
MJE18206 MJF18206
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
DYNAMIC SATURATION VOLTAGE DYNAMIC CHARACTERISTICS ON CHARACTERISTICS OFF CHARACTERISTICS Input Capacitance (VEB = 8 Vdc) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz) Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz) Dynamic Saturation Voltage: Determined 1 s and 3 s respectively after rising IB1 reaches 90% of final IB1 Collector Cutoff Current (VCE = 1000 V, VBE = 0) Collector Cutoff Current (VCB = 1200 V, IE = 0) Collector Cutoff Current (VCE = Rated VCES, VBE = 0) Collector Cutoff Current (VCE = 550 V, IB = 0) Collector Cutoff Current (VCE = 550 V, IB = 0) DC Current Gain (IC = 0.5 Adc, VCE = 5 Vdc) Collector-Emitter Saturation Voltage (IC = 1.3 Adc, IB = 0.13 Adc) Base-Emitter Saturation Voltage (IC = 1.3 Adc, IB = 0.13 Adc) Emitter-Cutoff Current (VEB = 9 Vdc, IC = 0) Emitter-Base Breakdown Voltage (IEBO = 1 mA, IC = 0) Collector-Base Breakdown Voltage (ICBO = 1 mA, IE = 0) Collector-Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) (IC = 200 mA, L = 25 mH, R = 200 ) (IC = 10 mAdc, VCE = 5 Vdc) (IC = 3 Adc, VCE = 1 Vdc) (IC = 1 Adc, VCE = 5 Vdc) (IC = 3 Adc, IB = 0.6 Adc) (IC = 3 Adc, IB = 0.6 Adc) (IC = 2 Adc, IB = 0.4 Adc) IC = 1.3 Adc IB1 = 130 mAdc VCC = 300 V IC = 3 Adc IB1 = 0.6 Adc VCC = 300 V Characteristic @ 3 s @ 1 s @ 3 s @ 1 s @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 25C @ TC = 25C @ TC = 25C @ TC = 25C @ TC = 125C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C VCEO(sus) VCER(sus) VCBO VCE(dsat) VCE(sat) VBE(sat) Symbol VEBO ICBO ICEO IEBO ICES Cob hFE Cib fT 1200 Min 550 600 18 10 18 11 5 4 1320 14.5 0.91 0.8 0.85 0.75 0.77 0.67 12.9 Typ 630 700 4.5 7.5 0.3 0.4 0.4 0.8 25 25 13 33 20 6 8 6 100 1000 100 200 2000 2000 0.75 1 Max 0.75 1.25 100 100 200 1.1 1 1.1 1 1 0.9 50 45 Adc Adc Adc Adc MHz Unit Vdc Vdc Vdc Vdc Vdc pF pF -- -- -- V
2
Motorola Bipolar Power Transistor Device Data
IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIII I I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIII I I I I II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIII I I I I II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIII I I I I II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIII I I I I II I I I IIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII I II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIII I I I I II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIII I I I I II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I I I II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 H) SWITCHING CHARACTERISTICS: Resistive Load (D.C. 10%, Pulse Width = 40 s) Crossover Time Storage Time Fall Time Crossover Time Storage Time Fall Time Crossover Time Storage Time Fall Time Turn-off Time Turn-on Time Turn-off Time Turn-on Time Turn-off Time Turn-on Time Turn-off Time Turn-on Time IC = 1 Adc, IB1 = 100 mAdc IB2 = 500 mAdc VCC = 300 Vdc IC = 1 Adc, IB1 = 70 mAdc IB2 = 1 Adc VCC = 125 Vdc PW = 70 s IC = 3 Adc, IB1 = 0.6 Adc IB2 = 0.6 Adc VCC = 300 Vdc IC = 3 Adc, IB1 = 0.6 Adc IB2 = 1.5 Adc VCC = 300 Vdc Characteristic IC = 1.3 Adc IB1 = 0.13 Adc IB2 = 0.65 Adc IC = 3 Adc IB1 = 0.6 Adc IB2 = 0.6 Adc IC = 3 Adc IB1 = 0.6 Adc IB2 = 1.5 Adc @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 25C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 25C @ TC = 125C @ TC = 25C Symbol ton ton ton toff toff toff td tc ts tc ts tc ts ts tr tf tf tf tf Min
Motorola Bipolar Power Transistor Device Data
600 1100 4.25 5.1 2.25 2.5 Typ 350 500 500 700 300 400 260 300 150 225 250 225 450 600 400 125 190 200 1.6 1.9 3.7 4.5 2 2.5 2 2.5 2.75 2.75 Max 800 500 800 450 350 200 350 700 750 300 250 350 1.2 4.5 2.5 5 2
MJE18206 MJF18206
Unit
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3
MJE18206 MJF18206
TYPICAL STATIC CHARACTERISTICS
100 TJ = 125C hFE , DC CURRENT GAIN TJ = 25C VCE = 1 V hFE , DC CURRENT GAIN 100 TJ = 125C TJ = 25C VCE = 3 V
TJ = - 20C 10
10
TJ = - 20C
1 0.001
0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS)
10
1 0.001
0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS)
10
Figure 1. DC Current Gain @ 1 Volt
Figure 2. DC Current Gain @ 3 Volts
100 TJ = 125C hFE , DC CURRENT GAIN VCE = 5 V VCE , VOLTAGE (VOLTS)
2 TJ = 25C VCE(sat) VCE(sat) (I = 2 A) C (IC = 1 A) 4A 1 3A 7A 5A
10
TJ = - 20C
TJ = 25C
1 0.001
0 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 10 100 1000 IB, BASE CURRENT (mA) 10000
Figure 3. DC Current Gain @ 5 Volts
Figure 4. Collector Saturation Region
10 IC/IB = 5 VCE , VOLTAGE (VOLTS) VCE , VOLTAGE (VOLTS) 1
10 IC/IB = 10 1
0.1 TJ = 125C TJ = 25C TJ = - 20C 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10
0.1 TJ = 125C TJ = 25C TJ = - 20C 0.01 0.001 0.1 1 0.01 IC, COLLECTOR CURRENT (AMPS) 10
0.01 0.001
Figure 5A. Collector-Emitter Saturation Voltage
Figure 5B. Collector-Emitter Saturation Voltage
4
Motorola Bipolar Power Transistor Device Data
MJE18206 MJF18206
TYPICAL STATIC CHARACTERISTICS
1.5 10000 TJ = 25C f(test) = 1 MHz VBE , VOLTAGE (VOLTS) C, CAPACITANCE (pF) Cib (pF) 1000 1 TJ = - 20C 0.5 TJ = 25C TJ = 125C 0 0.001 IC/IB = 5 IC/IB = 10 10 0.1 1 0.01 IC, COLLECTOR CURRENT (AMPS) 10 1 10 VR, REVERSE VOLTAGE (VOLTS) 100
Cob (pF) 100
Figure 6. Base-Emitter Saturation Region
Figure 7. Capacitance
1600 1400 1200 t, TIME (ns) 1000 800 600 400 200 0 0.5 1 2 2.5 3 3.5 4 1.5 IC, COLLECTOR CURRENT (AMPS) 4.5 5 IB1 = IB2 VCC = 300 V PW = 20 s IC/IB = 5 IC/IB = 10 125C
8 7 6 25C t, TIME ( s) 5 4 3 2 1 0.5 1 1.5 2 2.5 3 3.5 4 IC, COLLECTOR CURRENT (AMPS) 4.5 5 IC/IB = 10 TJ = 25C TJ = 125C IC/IB = 5 IB1 = IB2 VCC = 300 V PW = 20 s
Figure 8. Resistive Switching, ton
Figure 9. Resistive Switching, toff
6 TJ = 125C TJ = 25C 5 t, TIME (ns)
t si , STORAGE TIME (s)
IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 H
6 TJ = 125C TJ = 25C 5 IC = 1 A IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 H
4 IC/IB = 5 3 IC/IB = 10 2 0.5 1 2 2.5 1.5 IC, COLLECTOR CURRENT (AMPS) 3 3.5
4
IC = 2 A 3 3 5 7 11 9 hFE, FORCED GAIN 13 15
Figure 10. Inductive Storage Time, tsi
Figure 11. Inductive Storage Time
Motorola Bipolar Power Transistor Device Data
5
MJE18206 MJF18206
TYPICAL STATIC CHARACTERISTICS
1500 IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 H TJ = 125C TJ = 25C tc tfi tc tfi 0 0 1 2 IC, COLLECTOR CURRENT (AMPS) 3 t, TIME (ns) 1100 IB1 = IB2 VCC = 15 V 900 VZ = 300 V LC = 200 H 700 TJ = 125C TJ = 25C
1000 t, TIME (ns)
tc
500
500
300
tfi
100 0 1 2 3 IC, COLLECTOR CURRENT (AMPS) 4
Figure 12. Inductive Switching, tc & tfi @ IC/IB = 5
Figure 13. Inductive Switching, tc & tfi @ IC/IB = 10
680 IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 H TJ = 125C TJ = 25C IC = 2 A t c , CROSSOVER TIME (ns)
1200 TJ = 125C TJ = 25C 1000 IC = 2 A IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 H
t fi , FALL TIME (ns)
480
800
IC = 1 A 280
600
400 80 3 5 7 9 11 hFE, FORCED GAIN 13 15 200 3 4 5 6
IC = 1 A
9 10 11 78 hFE, FORCED GAIN
12
13
14 15
Figure 14. Inductive Fall Time
Figure 15. Inductive Crossover Time
1400 IC, COLLECTOR CURRENT (AMPS) 1300 1200 BVCER (VOLTS) 1100 1000 900 800 BVCER(sus) @ 200 mA 700 600 10 100 RBE () 1000 BVCER (VOLTS) @ 10 mA TJ = 25C
100 5 ms 10 EXTENDED SOA 1000 1 ms 10 s 1 s
1
MJE18206-DC MJF18206-DC
0.1
0.01 1 100 10 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 16. BVCER = f (RBE)
Figure 17. Forward Bias Safe Operating Area
6
Motorola Bipolar Power Transistor Device Data
MJE18206 MJF18206
TYPICAL STATIC CHARACTERISTICS
10 IC, COLLECTOR CURRENT (AMPS) TC 125C GAIN 5 LC = 4 mH 1.0 SECOND BREAKDOWN DERATING
6
POWER DERATING FACTOR
8
0.8
0.6
4
0.4 THERMAL DERATING
2 0V 0 400
-5 V -1.5 V 1200
0.2
600 800 1000 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0 20 40 60 80 100 120 TC, CASE TEMPERATURE (C) 140 160
Figure 18. Reverse Bias Switching Safe Operating Area
Figure 19. Forward Bias Power Derating
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 17 is based on T C = 25C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when T C > 25C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 17 may be found at any case temperature by using
the appropriate curve on Figure 19. TJ(pk) may be calculated from the data in Figures 22 and 23. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn-off with the base-to-emitter junction reverse biased. The safe level is specified as a reverse- biased safe operating area (Figure 18). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode.
TYPICAL SWITCHING CHARACTERISTICS (IB1 = IB2 FOR ALL CURVES)
10 VCE dyn 1 s dyn 3 s 0V 9 8 7 6 5 4 90% IB 1 s IB 3 s TIME 3 2 1 0 0 1 2 3 4 TIME 5 6 7 8 IB 90% IB1 Vclamp 10% Vclamp tc 10% IC tsi IC 90% IC tfi
Figure 20. Dynamic Saturation Voltage Measurements
Figure 21. Inductive Switching Measurements
Motorola Bipolar Power Transistor Device Data
7
MJE18206 MJF18206
TYPICAL SWITCHING CHARACTERISTICS (IB1 = IB2 FOR ALL CURVES)
Table 1. Inductive Load Switching Drive Circuit
+15 V 1 F 150 3W 100 3W MTP8P10 100 F
MTP8P10 MPF930 MUR105 +10 V MPF930 A 50 MJE210 COMMON 500 F 150 3W MTP12N10 RB2 Iout RB1
1 F -Voff
IC PEAK VCE PEAK VCE IB1 IB IB2
V(BR)CEO(sus) L = 10 mH RB2 = VCC = 20 Volts IC(pk) = 100 mA
Inductive Switching L = 200 H RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1
RBSOA L = 500 H RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1
8
Motorola Bipolar Power Transistor Device Data
MJE18206 MJF18206
TYPICAL THERMAL RESPONSE (IB1 = IB2 FOR ALL CURVES)
1 0.5 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.2 0.1 0.1 0.05 0.02 SINGLE PULSE t2 DUTY CYCLE, D = t1/t2 1 10 t, TIME (ms) 100 t1 P(pk) RJC(t) = r(t) RJC RJC = 1.25C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t)
0.01 0.01
0.1
1000
Figure 22. Typical Thermal Response (ZJC(t)) for MJE18206
1 0.5 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.2 0.1 0.05 t2 DUTY CYCLE, D = t1/t2 1 10 t, TIME (ms) 100 1000 t1 P(pk) RJC(t) = r(t) RJC RJC = 3.55C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t)
0.1
0.02 SINGLE PULSE 0.01 0.01 0.1
10000
100000
Figure 23. Typical Thermal Response (ZJC(t)) for MJF18206
Motorola Bipolar Power Transistor Device Data
9
MJE18206 MJF18206
TEST CONDITIONS FOR ISOLATION TESTS*
MOUNTED FULLY ISOLATED PACKAGE LEADS MOUNTED FULLY ISOLATED PACKAGE LEADS MOUNTED FULLY ISOLATED PACKAGE LEADS
CLIP
CLIP
0.107 MIN
0.107 MIN
HEATSINK 0.110 MIN
HEATSINK
HEATSINK
Figure 24. Clip Mounting Position for Isolation Test Number 1
Figure 25. Clip Mounting Position for Isolation Test Number 2
Figure 26. Screw Mounting Position for Isolation Test Number 3
* Measurement made between leads and heatsink with all leads shorted together
MOUNTING INFORMATION**
4-40 SCREW PLAIN WASHER CLIP
HEATSINK COMPRESSION WASHER NUT HEATSINK
Figure 27a. Screw-Mounted
Figure 27b. Clip-Mounted
Figure 27. Typical Mounting Techniques for Isolated Package
Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions. Destructive laboratory tests show that using a hex head 4-40 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. Additional tests on slotted 4-40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions. ** For more information about mounting power semiconductors see Application Note AN1040.
10
Motorola Bipolar Power Transistor Device Data
MJE18206 MJF18206
PACKAGE DIMENSIONS
B
4
F C T A S
-T-
SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.
Q
123
H K Z L V G D N
U
R J
DIM A B C D F G H J K L N Q R S T U V Z
INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 BASE COLLECTOR EMITTER COLLECTOR
MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04
STYLE 1: PIN 1. 2. 3. 4.
CASE 221A-06 TO-220AB ISSUE Y
-T- F Q A
123 SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D F G H J K L N Q R S U INCHES MIN MAX 0.621 0.629 0.394 0.402 0.181 0.189 0.026 0.034 0.121 0.129 0.100 BSC 0.123 0.129 0.018 0.025 0.500 0.562 0.045 0.060 0.200 BSC 0.126 0.134 0.107 0.111 0.096 0.104 0.259 0.267 MILLIMETERS MIN MAX 15.78 15.97 10.01 10.21 4.60 4.80 0.67 0.86 3.08 3.27 2.54 BSC 3.13 3.27 0.46 0.64 12.70 14.27 1.14 1.52 5.08 BSC 3.21 3.40 2.72 2.81 2.44 2.64 6.58 6.78
-B-
C S U
H K -Y-
G N L D
3 PL M
J R
0.25 (0.010)
B
M
Y
STYLE 1: PIN 1. GATE 2. DRAIN 3. SOURCE
CASE 221D-02 (ISOLATED TO-220 TYPE) UL RECOGNIZED: FILE #E69369 ISSUE D
Motorola Bipolar Power Transistor Device Data
11
MJE18206 MJF18206
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com
JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298
12
Motorola Bipolar Power Transistor Device Data
*MJE18206/D*
MJE18206/D

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